Citation :

Quantum Transport Modeling in Nano scale Electronic Materials for Next-Generation Devices, 2026. "" ESP International Journal of Emerging Multidisciplinary Research [ESP-IJEMR]  Volume 2, Issue 1: 64-79.

Abstract :

The fast miniaturization trend of the electronic components has pushed semiconductor industry to the Nano scale regime where classical transport theories usually not able to provide accurate descriptions on charge carrier behaviors. At the atomic scale, as device dimensions continue to shrink toward molecular sizes, quantum mechanical effects — tunnelling, wave interference, ballistic transport and electron confinement and quantum coherence — begin to dominate the electrical properties of materials and devices [22]. As a result, quantum transport modeling has become one of the key research topics towards understanding and controlling next-generation Nano electronic devices.

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Keywords :

Nano scale transport, Nanostructures for quantum transport, Quantum uniforminastion for NEGF in Nano scale electronics quantum tunnelling ballistic transport.